Publication Authors

Prasanth Thummala
Electrical Engineering, Technical University of Denmark

Dorai Baby Yelaverthi
ECE, Utah State University

Regan Zane
ECE, Utah State University

Ziwei Ouyang
Electrical Engineering, Technical University of Denmark

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A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter

This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step-down from 200-300 V to 0-28 V. Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the AC resistances of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V on a laboratory prototype operating at 10 MHz. At 20 W the experimental prototype achieved an efficiency of 85.2%

For the full publication, visit https://ieeexplore.ieee.org/document/8506666/authors